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THE EFFECT OF DEPOSITION TEMPRATURE ON THE CADMIUM DOPED COPPER OXIDE THIN FILMS DEPOSITED BY CHEMICAL BATH DEPOSITION METHOD
(HAWASSA UNIVERSITY, 2024-11) SIMACHEW SHITAHUN
The cadmium doped copper oxide thin films were deposited on the glass substrate for 30minutes by using chemical bath deposition. The bath contained the solution of cadmium chloride and copper acetate as a source of cadmium and copper ion respectively. Hydrazine and ammonia used as complexing agent at deposited temperature of 40ᵒC, 60ᵒC, 70ᵒC and 80ᵒC. The films were characteri zed using XRD and UV- VIS characterization techniques. According to X-ray diffraction analysis the prepared thin films revealed that monoclinic CuO and cubic Cu2O phases coexist in all samples. Th ere also was very weak peak of cubic face centered CdO only at lower deposition temperature 400C; however it was inhibited at deposition temperature 600C, 700C and 800C. The crystallinity of Cu2O and CuO phases were increased as deposition temperature increased except a slight decreased from 600C to 700C for Cu2O and from 70°C to 80°C for CuO. However, dislocation and lattice strain decr eased with increasing temperature, except a slight increased from 600C to 700C for Cu2O and from 7 0°C to 80°C for CuO. The optical study of the films showed that absorbance was higher at shortest wave length.The band gaps of the films were decreased from 1.95 eV to 1.90 eV for deposition temp erature increased from 400C - 800C