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    THE EFFECT OF DEPOSITION TEMPRATURE ON THE CADMIUM DOPED COPPER OXIDE THIN FILMS DEPOSITED BY CHEMICAL BATH DEPOSITION METHOD
    (HAWASSA UNIVERSITY, 2024-11) SIMACHEW SHITAHUN
    The cadmium doped copper oxide thin films were deposited on the glass substrate for 30minutes by using chemical bath deposition. The bath contained the solution of cadmium chloride and copper acetate as a source of cadmium and copper ion respectively. Hydrazine and ammonia used as complexing agent at deposited temperature of 40ᵒC, 60ᵒC, 70ᵒC and 80ᵒC. The films were characteri zed using XRD and UV- VIS characterization techniques. According to X-ray diffraction analysis the prepared thin films revealed that monoclinic CuO and cubic Cu2O phases coexist in all samples. Th ere also was very weak peak of cubic face centered CdO only at lower deposition temperature 400C; however it was inhibited at deposition temperature 600C, 700C and 800C. The crystallinity of Cu2O and CuO phases were increased as deposition temperature increased except a slight decreased from 600C to 700C for Cu2O and from 70°C to 80°C for CuO. However, dislocation and lattice strain decr eased with increasing temperature, except a slight increased from 600C to 700C for Cu2O and from 7 0°C to 80°C for CuO. The optical study of the films showed that absorbance was higher at shortest wave length.The band gaps of the films were decreased from 1.95 eV to 1.90 eV for deposition temp erature increased from 400C - 800C
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    THE EFFECT OF DEPOSITION TEMPERATURE ON STRUCTURAL AND OPTICAL PROPERTIES OF CdS THIN FILM BY USING CHEMICALBATH DEPOSITION METHOD
    (HAWASSA UNIVERSITY, 2024-04) Dawit Ewnetie Temesgen
    Cadmium sulphide is an intrinsic n-type semiconductor material with the chemical formula CdS. CdS thin films where deposited on glass substrates using cadmium sulphate as the cadmium ion source, thiourea as the sulphur source, and ammonia as the complexing agent through the chemical bath deposition method . The effect of deposition temperature ranging from 400C to 800C in 100C intervals on the structural and optical properties of thin films was investigated. The films were annealed at 3000C for 1:30 hours. The CdS thin films were characterized using XRD for structure and UV-VIS spectrophotometer for optical property determination. Optical investigations revealed that CdS exhibited high absorption in the visible region, with the optical band gap from 1.80 eV to 1.37 eV as the temperature increased. This indicates an inverse relationship between deposition temperature and band gap energy, making these thin films suitable as absorber materials for solar cell fabrication. XRD analysis showed that the deposited CdS thin films had a simple hexagonal crystal structure with preferred orientation along the (002) plane. The intensity of the sharp peak indicates that the sample is highly crystalline. Additionally, the crystalline size of the CdS thin films increased with the higher bath temperatures. Generally, varying the deposition temperature had effect on the structural and optical properties of cadmium sulphide thin films.